Microwave Radio Frequency
In recent years, with the rapid progress of science and technology, the demand for radio frequency integrated circuits (RFIC) has been rising, mainly due to the urgent need for greater bandwidth, higher switching speed and higher performance power amplifiers, especially in the context of rapid development of optical networks. Gallium nitride (GaN) has become the ideal choice for RF power amplifiers due to its excellent high frequency performance, high power density and good thermal stability, which is very suitable for high power and high frequency military applications.

The
Challenge
The mounting of power semiconductor chips is a key link that affects the performance, reliability and cost of the devices. Power semiconductor chips will produce a lot of heat when working, if not timely heat dissipation will affect the performance and life of the chip, the device packaging technology must have a good heat dissipation effect, traditional packaging materials and technology are subject to great limitations to meet the needs of high temperature applications.
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Consider the key requirements of the actual production process and alignment -
High precision pick and fit requirements -
Multiple chip bonding technologies (epoxy, eutectic, dipping) -
Patch efficiency needs to be cost-effective -
Modular design, can meet the diversified functional needs of customers
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